Temperature dependence of ionization energies of deep bound states in semiconductors
نویسندگان
چکیده
2014 We explain that the temperature coefficient of the ionization energy of a deep level can be determined from measurements of carrier emission rate and capture rate, using transient capacitance techniques such as DLTS. Two electron traps and three hole traps in GaAs are examined as an illustration. One of the hole traps appears to be strongly pinned to the conduction band. LE JOURNAL DE PHYSIQUE LETTRFS TOME 38, ler JANVIER 1977 Classification Physics Abstracts 7.160 7.170 8.140 8.272 In a limited range of temperatures, the temperature dependence of the ionization energy of a bound state in an ordered, non-degenerate semiconductor may be assumed to be linear :
منابع مشابه
Theoretical modeling of ionization energies of argon clusters: nuclear delocalization effects.
Temperature dependence of vertical ionization energies is modeled for small argon clusters (N ≤ 13) using classical parallel-tempering Monte Carlo methods and extended interaction models based on the diatomics-in-molecules approach. Quantum effects at the zero temperature are also discussed in terms of zero-point nuclear vibrations, either at the harmonic approximation level or at the fully anh...
متن کاملExcited Terminal States of Bound Exciton Complexes
Emission from the excited terminal states of bound exciton-donor complexes has been observed in several I I — V I compounds. Studying these optical transitions allows one to determine the donor ionization energies, the electron effective masses as well as the electron (/-values in these materials. A good theoretical fit to the experimental data was obtained, using the effective mass approximati...
متن کاملConvergence of supercell calculations for point defects in semiconductors: Vacancy in silicon
The convergence of first-principles supercell calculations for defects in semiconductors is studied with the vacancy in bulk Si as a test case. The ionic relaxations, defect formation energies, and ionization levels are calculated for supercell sizes of up to 216 atomic sites using several k-point meshes in the Brillouin-zone integrations. The energy dispersion, inherent for the deep defect sta...
متن کاملMolecular Insight Into the Energy Levels at the Organic Donor/Acceptor Interface: A QM/MM Study
We present an investigation of the band levels and charge transfer (CT) states at the interface between two organic semiconductors, metal-free phthalocyanine (H2Pc) and 3,4,9,10 perylenetetracarboxylic bisbenzimidazole (PTCBI), using a combined quantum mechanics/molecular mechanics (QM/MM) technique. Near the organic-organic interface significant changes from the bulk, as large as 0.2 eV, are f...
متن کاملTunneling in Iv-vi Compounds
Metal-insulator-IV-VI compound semiconductor tunnel junctions were formed for both single and polycrystalline semiconductor material. I-V and conductance characteristics were taken as a function of temperature, and magnetic field. The experimental results were interpreted in terms of a conventional tunneling theory, and yielded information on Fermi energies, band gaps, temperature dependence of...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2016